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E-mail：szdq@v.sanzhengdianqi.com

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SiC-MOSFET Solid-state high frequency induction heating equipment

Steel pipe welding, brazing, hot assembly, paint drying, quenching, tempering, annealing, normalizing, quenching and tempering, metal oxide smelting and other hot working and heat treatment processes.

keyword：

SiC-MOSFET

Classification：

SIC-MOS Solid-State High Frequency Welder

Tel：

szdq@v.sanzhengdianqi.com

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Details

Applicable scope

Steel pipe welding, brazing, hot assembly, paint drying, quenching, tempering, annealing, normalizing, quenching and tempering, metal oxide smelting and other hot working and heat treatment processes.

Functional structure

The SiC-MOSFET solid-state high-frequency induction heating power supply adopts an AC-DC-AC frequency conversion structure, and the rectifier can adopt three structures to meet the different needs of customers or different power levels: 3-phase 6-pulse thyristor rectification, diode rectification and IGBT DC chopping, and 12-pulse thyristor rectification. The inverter adopts SEMIQ high-voltage high-power SiC-MOSFET module to form a full bridge series resonant inverter. The inverter output completes power combining, load impedance matching and electrical isolation through high-efficiency ferrite matching transformer. The resonant tank circuit adopts water-cooled polypropylene film capacitors to form a series resonant circuit.
Compared with Si-MOSFET, SiC-MOSFET has three main advantages:
1) High temperature and high voltage resistance: The working temperature of SiC-MOSFET devices can theoretically reach over 600 ℃, which is 4 times higher than the equivalent Si-MOSFET devices and 10 times higher than their withstand voltage capacity. They can bear more extreme working environments.
2) Miniaturization and lightweight: SiC-MOSFET devices have higher thermal conductivity and power density, which can simplify the heat dissipation system and achieve miniaturization and lightweight of devices.
3) Low loss and high frequency: The operating frequency of SiC-MOSFET devices can reach 10 times that of Si-MOSFET devices, and the efficiency does not decrease with the increasing of operating frequency, which can reduce energy loss by nearly 50%. At the same time, the increase in frequency reduces the volume of peripheral components such as inductances and transformers, decreasing the volume of the system and the cost of other components.
For low-power equipment (≤ 400kW), the power supply adopts the integrated structure. For high-power equipment, the power supply adopts the split structure. The complete equipment consists of high-frequency power cabinet, circulating soft water cooling system, operation console (optional), positioning table (optional), etc.

3-phase 6-pulse rectification

3-phase 12-pulse rectification

Comparison of Semiconductor Performance

Si-MOSFET and SiC-MOSFET modules are equivalent

Technical characteristics

1) 60% reduction in device loss of SiC-MOSFET! The overall efficiency of high-frequency power supply has been improved by about 5-8%. Under certain cooling conditions, the switching frequency can be higher, and HF power supply with frequency higher than 600kHz can be directly produced (the original Si-MOSFET HF power supply adopts double-frequency technology), greatly reducing the volume of the HF power supply.
2) SiC-MOSFET is internally integrated with anti-parallel SiC-Diod, greatly simplifying external wiring, reducing fault points, external electromagnetic radiation, and improving the overall safety of the power supply. The layout structure of the resistance capacitance absorption circuit (R+C) has been optimized, and the shorter RC leads bring good absorption effect, with perfect inverter waveform and significant decreasing of heating of the inverter unit.
3) SiC-MOSFET has a withstand voltage of 1200V, and on the premise of ensuring safety, the DC voltage of HF power supply is 500V. The power factor on the grid side is about 0.95, with small AC current and harmonic current on the grid side. The power supply and power distribution costs are greatly reduced, and the power supply efficiency is effectively improved.
4) Adopting new type integrated inverter power unit, with simple and reliable structure and easy to be maintained. Aluminum heat dissipation plate with embedded copper tube can ensure good heat dissipation effect, and PCB high-frequency absorption capacitor plate can ensure excellent absorption effect.
5) The inverter phase-locked circuit adopts full digital control technology, and the main control chip adopts industrial grade FPGA microprocessor, which has high reliability and flexibility. It not only has high phase-locked accuracy and wide phase-locked range, but also can meet the special needs of different users for external interfaces.
6) The rectifier adopts an industrial grade FPGA microprocessor control system to achieve precise synchronous triggering, with high control accuracy and low non-characteristic harmonics on the grid side. It can achieve different operating modes such as constant power, constant voltage, and constant current.
7) The adoption of pulse shielded modulation (PSM) inverter power regulation technology can realize the automatic load matching function of the power supply, with strong load adaptability, high electrical efficiency, and high power factor on the grid side.
8) Having perfect protection functions of overvoltage, overcurrent, loss of lock, temperature, water flow, etc., with reliable operation and low failure rate.
9) Friendly human-machine interaction system: The PLC and color touch screen are adopted to form a complete HMI (human-machine interface system). On the one hand, the communication control with the user's upper computer is realized through Ethernet or DP communication, on the other hand, the automatic logic control, fault display and fault diagnosis functions of the power supply system can be realized, and the big data analysis and recording function is also available.